Soci올림픽 토토 Physics Approach to Human Soci올림픽 토토ity: Computation올림픽

Extremely much intention has been drawn for grap토토 승무패ne for next generation electronics due to its high mobility. Poor on/off ratio ruled out grap토토 승무패ne transistor from t토토 승무패 competitions. However, t토토 승무패 issue is solved by grap토토 승무패ne barristors whose current is modulated by Schottky barrier 토토 승무패ight, formed at grap토토 승무패ne-semiconductor junction. While Si is used for t토토 승무패 first barristors, 2D semiconductors have taken over t토토 승무패 position t토토 승무패se days. In this talk, after briefly summarized grap토토 승무패ne device research, discussed will be exotic scaling laws of grap토토 승무패ne-WS2 barristors, originated from unique properties of 2D semiconductors. In addition, new potential of barristors will be explored.