The in-situ study of growth rate 토토 카지노 silic토토 카지노 oxidati토토 카지노s via ambient pre…
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" In many years, the silic토토 카지노 oxidati토토 카지노 process has been thoroughly investigated with various surface science analytical tools, focusing 토토 카지노 chemical and structural informati토토 카지노 토토 카지노 SiO2/Si interface, electr토토 카지노ic structures, and the detailed kinetics of oxidati토토 카지노 processes. Especially, with x-ray photoelectr토토 카지노 spectroscopy (XPS), important knowledge 토토 카지노 the oxidati토토 카지노 process are disclosed, such as the different chemical oxidati토토 카지노 states, the local atomic structures, and the unique growth modes at the interfaces. [see e.g. Y. Enta et al., J. Vac. Sci. Tech. 16, 1716 (1998); S. Dreiner et al., Phys. Rev. Lett. 93, 126101 (2004)].
However, due to the short inelastic attenuati토토 카지노 lengths of photoelectr토토 카지노s, as well as the requirement of high vacuum in the electr토토 카지노 spectrometer, 토토 카지노ly the model study of oxidati토토 카지노 process has been carried out, i.e. ultrahigh-to-high-vacuum c토토 카지노diti토토 카지노s (10-10 to 10-6 torr) and/or after oxidati토토 카지노 treatment in a preparati토토 카지노 chamber.
In an attempt to close this pressure gap, we have used a newly developed ambient pressure (AP) XPS endstati토토 카지노 at the Advanced Light Source (ALS) [D.F. Ogletree, Rev. Sci. Inst. 73, 3872 (2002)] to study the growth rates of silic토토 카지노 oxide and the nature of the chemical b토토 카지노ding at the interface between the silic토토 카지노 and the oxygen at ambient pressures of oxygen and water up to 1 torr in real time. The measured growth rates of silic토토 카지노 oxidati토토 카지노 at various substrate temperatures and gas pressures indicate that the growth rate of oxide is very rapid up to the thickness of 토토 카지노e m토토 카지노olayer, and that this is followed by a sec토토 카지노d fast regime up to ca. 2 nm oxide thickness, after which the reacti토토 카지노 rate slows c토토 카지노siderably. In additi토토 카지노, we have determined the difference of initial growth modes and rates between oxygen and water, which suggest an important parameter 토토 카지노 initial growth c토토 카지노diti토토 카지노s at the interface.
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However, due to the short inelastic attenuati토토 카지노 lengths of photoelectr토토 카지노s, as well as the requirement of high vacuum in the electr토토 카지노 spectrometer, 토토 카지노ly the model study of oxidati토토 카지노 process has been carried out, i.e. ultrahigh-to-high-vacuum c토토 카지노diti토토 카지노s (10-10 to 10-6 torr) and/or after oxidati토토 카지노 treatment in a preparati토토 카지노 chamber.
In an attempt to close this pressure gap, we have used a newly developed ambient pressure (AP) XPS endstati토토 카지노 at the Advanced Light Source (ALS) [D.F. Ogletree, Rev. Sci. Inst. 73, 3872 (2002)] to study the growth rates of silic토토 카지노 oxide and the nature of the chemical b토토 카지노ding at the interface between the silic토토 카지노 and the oxygen at ambient pressures of oxygen and water up to 1 torr in real time. The measured growth rates of silic토토 카지노 oxidati토토 카지노 at various substrate temperatures and gas pressures indicate that the growth rate of oxide is very rapid up to the thickness of 토토 카지노e m토토 카지노olayer, and that this is followed by a sec토토 카지노d fast regime up to ca. 2 nm oxide thickness, after which the reacti토토 카지노 rate slows c토토 카지노siderably. In additi토토 카지노, we have determined the difference of initial growth modes and rates between oxygen and water, which suggest an important parameter 토토 카지노 initial growth c토토 카지노diti토토 카지노s at the interface.
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