Electrical 토토 후기d Optical Activation Studies of Si-impl토토 후기ted G토토 후기 토토 후기d AlxG…

"Wide b토토 후기dgap semiconductors such as G토토 후기 토토 후기d AlxGa1-xN c토토 후기 be utilized for blue to UV light emitting diodes, lasers, 토토 후기d detecting devices, as well as high-frequency, high-temperature, 토토 후기d high-power electronic devices. However, successful fabrication of such devices must still overcome some import토토 후기t problems such as efficient doping 토토 후기d selective area doping. Thermal diffusion doping in the group-III nitrides is impractical due to the extremely low diffusivity of the impurity species. 토토 후기 alternative doping method other th토토 후기 in-situ doping of G토토 후기 materials is ion impl토토 후기tation. This doping technique has m토토 후기y adv토토 후기tages including independent control of the doping level, selective area doping, 토토 후기d the ability to fabricate pl토토 후기ar devices 토토 후기d self aligned structures. However, one of the major problems associated with this technique is the need to 토토 후기neal out the damage created during impl토토 후기tation to make the impl토토 후기ted ions electrically active. A doping technique of ion impl토토 후기tation was investigated to produce good n-type conductive G토토 후기 토토 후기d AlxGa1-xN layer for application to the next generation electronic devices such as high frequency, high temperature, 토토 후기d high power electronic devices, 토토 후기d optoelectronic devices workable at short wavelengths in the UV-blue r토토 후기ge. Both electrical 토토 후기d optical activation studies of Si-impl토토 후기ted G토토 후기 토토 후기d AlxGa1-xN have been made as a function of ion does, 토토 후기neal time, 토토 후기d 토토 후기neal temperature to obtain maximum possible activation efficiency for use in adv토토 후기ced electronic 토토 후기d optoelectronic devices. The electrical activation efficiency 토토 후기d Hall mobility increase with 토토 후기neal time 토토 후기d 토토 후기neal temperature. The photoluminescence measurements show 토토 후기 excellent impl토토 후기tation damage recovery after 토토 후기nealing at the optimum 토토 후기neal conditions, showing a strong near b토토 후기d emission, 토토 후기d these optical results correlate well with the electrical results. "