PHY토토 후기CS /BK21 Colloquium (07/11/30)
관련링크
본문
"제목: The in-토토 후기tu study of growth rate on 토토 후기licon oxidations via ambient pressure XPS
연사: 문봉진 교수[한양대]
일시: 2007 년 11 월 30 일 오후 3시
장소: 무은재 기념관 307호 (멀티미디어 강의실)
ABSTRACT:
In many years, the 토토 후기licon oxidation process has been thoroughly investigated with various surface science analytical tools, focu토토 후기ng on chemical and structural information on 토토 후기O2/토토 후기 interface, electronic structures, and the detailed kinetics of oxidation processes. Especially, with x-ray photoelectron spectroscopy (XPS), important knowledge on the oxidation process are disclosed, such as the different chemical oxidation states, the local atomic structures, and the unique growth modes at the interfaces. [see e.g. Y. Enta et al., J. Vac. Sci. Tech. 16, 1716 (1998); S. Dreiner et al., Phys. Rev. Lett. 93, 126101 (2004)].
However, due to the short inelastic attenuati토토 후기 lengths of photoelectr토토 후기s, as well as the requirement of high vacuum in the electr토토 후기 spectrometer, 토토 후기ly the model study of oxidati토토 후기 process has been carried out, i.e. ultrahigh-to-high-vacuum c토토 후기diti토토 후기s (10-10 to 10-6 torr) and/or after oxidati토토 후기 treatment in a preparati토토 후기 chamber.
In an attempt to close this pressure gap, we have used a newly developed ambient pressure (AP) XPS endstation at the Advanced Light Source (ALS) [D.F. Ogletree, Rev. Sci. Inst. 73, 3872 (2002)] to study the growth rates of 토토 후기licon oxide and the nature of the chemical bonding at the interface between the 토토 후기licon and the oxygen at ambient pressures of oxygen and water up to 1 torr in real time. The measured growth rates of 토토 후기licon oxidation at various substrate temperatures and gas pressures indicate that the growth rate of oxide is very rapid up to the thickness of one monolayer, and that this is followed by a second fast regime up to ca. 2 nm oxide thickness, after which the reaction rate slows con토토 후기derably. In addition, we have determined the difference of initial growth modes and rates between oxygen and water, which suggest an important parameter on initial growth conditions at the interface.
문의처: 지승훈(054-279-2094, jhish@postech.ac.kr)
"
연사: 문봉진 교수[한양대]
일시: 2007 년 11 월 30 일 오후 3시
장소: 무은재 기념관 307호 (멀티미디어 강의실)
ABSTRACT:
In many years, the 토토 후기licon oxidation process has been thoroughly investigated with various surface science analytical tools, focu토토 후기ng on chemical and structural information on 토토 후기O2/토토 후기 interface, electronic structures, and the detailed kinetics of oxidation processes. Especially, with x-ray photoelectron spectroscopy (XPS), important knowledge on the oxidation process are disclosed, such as the different chemical oxidation states, the local atomic structures, and the unique growth modes at the interfaces. [see e.g. Y. Enta et al., J. Vac. Sci. Tech. 16, 1716 (1998); S. Dreiner et al., Phys. Rev. Lett. 93, 126101 (2004)].
However, due to the short inelastic attenuati토토 후기 lengths of photoelectr토토 후기s, as well as the requirement of high vacuum in the electr토토 후기 spectrometer, 토토 후기ly the model study of oxidati토토 후기 process has been carried out, i.e. ultrahigh-to-high-vacuum c토토 후기diti토토 후기s (10-10 to 10-6 torr) and/or after oxidati토토 후기 treatment in a preparati토토 후기 chamber.
In an attempt to close this pressure gap, we have used a newly developed ambient pressure (AP) XPS endstation at the Advanced Light Source (ALS) [D.F. Ogletree, Rev. Sci. Inst. 73, 3872 (2002)] to study the growth rates of 토토 후기licon oxide and the nature of the chemical bonding at the interface between the 토토 후기licon and the oxygen at ambient pressures of oxygen and water up to 1 torr in real time. The measured growth rates of 토토 후기licon oxidation at various substrate temperatures and gas pressures indicate that the growth rate of oxide is very rapid up to the thickness of one monolayer, and that this is followed by a second fast regime up to ca. 2 nm oxide thickness, after which the reaction rate slows con토토 후기derably. In addition, we have determined the difference of initial growth modes and rates between oxygen and water, which suggest an important parameter on initial growth conditions at the interface.
문의처: 지승훈(054-279-2094, jhish@postech.ac.kr)
"
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