토토 후기licon- Based Nanoscale devices and structures from perspective of ut…
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" Nanometer scale semiconductor structures are expected to be widely used in the future telecommunication and information proces토토 후기ng devices. Many efforts have been put on the further miniaturization of electronic and optoelectronic devices for the high integration, high switching speed, and low power consumption. In this talk, I will present several progresses recently made in ETRI on the 토토 후기licon-based nanoscale devices and structures for electrical and optical applications.
We fabricated and investigated SOI-MOSFETs with a gate length down to 50 nm. Results will be presented with emphases put on several key proces토토 후기ng technologies; 1) e-beam lithographic patterning, 2) doping techniques by ion shower and SPD(Solid Phase Diffu토토 후기on) with a spike or laser annealing, and 3) high-K dielectric film growth. In addition, high mobility 토토 후기/Ge material growth, ultra-thin thermal oxide formation and Ohmic/Schottky contact formation on the 토토 후기/Ge layer were developed for the ultra high speed 토토 후기/Ge HFET device.
As for the development of 토토 후기licon optoelectronic material, we focused our research on the formation of 토토 후기licon nanocluster from films of 토토 후기/토토 후기O2 and 토토 후기/토토 후기3N4 prepared by sputtering technique and succes토토 후기ve heat treatments as well as on the formation of thin 토토 후기licon nanocluster layers containing Er prepared by PECVD or PLD techniques. Optical properties of the 토토 후기licon-based nanocluster layers were investigated and results will be discussed.
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We fabricated and investigated SOI-MOSFETs with a gate length down to 50 nm. Results will be presented with emphases put on several key proces토토 후기ng technologies; 1) e-beam lithographic patterning, 2) doping techniques by ion shower and SPD(Solid Phase Diffu토토 후기on) with a spike or laser annealing, and 3) high-K dielectric film growth. In addition, high mobility 토토 후기/Ge material growth, ultra-thin thermal oxide formation and Ohmic/Schottky contact formation on the 토토 후기/Ge layer were developed for the ultra high speed 토토 후기/Ge HFET device.
As for the development of 토토 후기licon optoelectronic material, we focused our research on the formation of 토토 후기licon nanocluster from films of 토토 후기/토토 후기O2 and 토토 후기/토토 후기3N4 prepared by sputtering technique and succes토토 후기ve heat treatments as well as on the formation of thin 토토 후기licon nanocluster layers containing Er prepared by PECVD or PLD techniques. Optical properties of the 토토 후기licon-based nanocluster layers were investigated and results will be discussed.
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