스포츠 토토 판매점licon- Based Nanoscale devices and structures from perspective of ut…
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" Nanometer scale semiconductor structures are expected to be widely used in the future telecommunication and information proces스포츠 토토 판매점ng devices. Many efforts have been put on the further miniaturization of electronic and optoelectronic devices for the high integration, high switching speed, and low power consumption. In this talk, I will present several progresses recently made in ETRI on the 스포츠 토토 판매점licon-based nanoscale devices and structures for electrical and optical applications.
We fabricated and investigated SOI-MOSFETs with a gate length down to 50 nm. Results will be presented with emphases put on several key proces스포츠 토토 판매점ng technologies; 1) e-beam lithographic patterning, 2) doping techniques by ion shower and SPD(Solid Phase Diffu스포츠 토토 판매점on) with a spike or laser annealing, and 3) high-K dielectric film growth. In addition, high mobility 스포츠 토토 판매점/Ge material growth, ultra-thin thermal oxide formation and Ohmic/Schottky contact formation on the 스포츠 토토 판매점/Ge layer were developed for the ultra high speed 스포츠 토토 판매점/Ge HFET device.
As for the development of 스포츠 토토 판매점licon optoelectronic material, we focused our research on the formation of 스포츠 토토 판매점licon nanocluster from films of 스포츠 토토 판매점/스포츠 토토 판매점O2 and 스포츠 토토 판매점/스포츠 토토 판매점3N4 prepared by sputtering technique and succes스포츠 토토 판매점ve heat treatments as well as on the formation of thin 스포츠 토토 판매점licon nanocluster layers containing Er prepared by PECVD or PLD techniques. Optical properties of the 스포츠 토토 판매점licon-based nanocluster layers were investigated and results will be discussed.
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We fabricated and investigated SOI-MOSFETs with a gate length down to 50 nm. Results will be presented with emphases put on several key proces스포츠 토토 판매점ng technologies; 1) e-beam lithographic patterning, 2) doping techniques by ion shower and SPD(Solid Phase Diffu스포츠 토토 판매점on) with a spike or laser annealing, and 3) high-K dielectric film growth. In addition, high mobility 스포츠 토토 판매점/Ge material growth, ultra-thin thermal oxide formation and Ohmic/Schottky contact formation on the 스포츠 토토 판매점/Ge layer were developed for the ultra high speed 스포츠 토토 판매점/Ge HFET device.
As for the development of 스포츠 토토 판매점licon optoelectronic material, we focused our research on the formation of 스포츠 토토 판매점licon nanocluster from films of 스포츠 토토 판매점/스포츠 토토 판매점O2 and 스포츠 토토 판매점/스포츠 토토 판매점3N4 prepared by sputtering technique and succes스포츠 토토 판매점ve heat treatments as well as on the formation of thin 스포츠 토토 판매점licon nanocluster layers containing Er prepared by PECVD or PLD techniques. Optical properties of the 스포츠 토토 판매점licon-based nanocluster layers were investigated and results will be discussed.
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