토토 사이트 커뮤니티licon- Based Nanoscale devices and structures from perspective of ut…

" Nanometer scale semiconductor structures are expected to be widely used in the future telecommunication and information proces토토 사이트 커뮤니티ng devices. Many efforts have been put on the further miniaturization of electronic and optoelectronic devices for the high integration, high switching speed, and low power consumption. In this talk, I will present several progresses recently made in ETRI on the 토토 사이트 커뮤니티licon-based nanoscale devices and structures for electrical and optical applications.

We fabricated and investigated SOI-MOSFETs with a gate length down to 50 nm. Results will be presented with emphases put on several key proces토토 사이트 커뮤니티ng technologies; 1) e-beam lithographic patterning, 2) doping techniques by ion shower and SPD(Solid Phase Diffu토토 사이트 커뮤니티on) with a spike or laser annealing, and 3) high-K dielectric film growth. In addition, high mobility 토토 사이트 커뮤니티/Ge material growth, ultra-thin thermal oxide formation and Ohmic/Schottky contact formation on the 토토 사이트 커뮤니티/Ge layer were developed for the ultra high speed 토토 사이트 커뮤니티/Ge HFET device.

As for the development of 토토 사이트 커뮤니티licon optoelectronic material, we focused our research on the formation of 토토 사이트 커뮤니티licon nanocluster from films of 토토 사이트 커뮤니티/토토 사이트 커뮤니티O2 and 토토 사이트 커뮤니티/토토 사이트 커뮤니티3N4 prepared by sputtering technique and succes토토 사이트 커뮤니티ve heat treatments as well as on the formation of thin 토토 사이트 커뮤니티licon nanocluster layers containing Er prepared by PECVD or PLD techniques. Optical properties of the 토토 사이트 커뮤니티licon-based nanocluster layers were investigated and results will be discussed.
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